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Infrared absorption in arsenic-doped silicon Goruk, William

Abstract

The optical absorption line is 1s₁- 2p₀ at the absorption spectrum of arsenic doped silicon has been studied for various arsenic concentrations at four temperatures. The concentrations are .9 x 10¹⁵ cm⁻³, 1.7 x 10¹⁵ cm⁻³, 4.0 x 10¹⁵ cm⁻³ and 1.5 x 10¹⁶ cm⁻³, the temperatures are 4.2°K, 53°K, 77°K, and 90°K. Spectrometer broadening was accounted for in the observed line-widths. There was observed two temperature independent broadening mechanisms, concentration and strain broadening. Two temperature dependent broadening mechanisms were observed, phonon broadening and the statistical Stark effect. The five, broadening mechanisms are believed to account for the total line-width through the use of the Voigt analysis half-breadth method. A shift of the peak position with temperature was noted and a possible explanation presented.

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