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Arkin, Dilyar

This report provide details on how we designed, built, and implemented an experiment to measure the microwave power absorption of single-crystal samples of silicon as a function of temperature. We worked with both pdoped and n-doped samples spanning a wide range of doping levels. Our measurements were made using a “loop-gap resonator” operating at 700 MHz which allowed us to measure as-grown crystals without requiring electrical contacts. We used a two-stage closed-cycle cryocooler and a thermal stage to vary the temperature of the sample from 20 to 80 K. The power absorption measurements and sample dimensions were used to extract the surface resistance of the samples. For samples with relatively low doping levels, a sharp decrease in the surface resistance was observed at low temperatures marking the onset of a metal-to-insulator transition. For each sample, a preliminary analysis of the surface resistance data has been used to extract the temperature dependence of the microwave conductivity.

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University of British Columbia. PHYS 448

Vancouver : University of British Columbia Library

10.14288/1.0442408

Science, Irving K. Barber Faculty of (Okanagan); Computer Science, Mathematics, Physics and Statistics, Department of (Okanagan)

Undergraduate

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