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Hall coefficient and resistivity of thin films of antimony and bismuth prepared by distillation Leverton, Walter Frederick

Abstract

An apparatus lias been constructed to measure the Hall coefficient in metals and semi-conductors by an a.c. method. The a.c. method completely eliminates the Ettingshausen effect which in many cases introduces a considerable correction to Hall voltages measured by d.c. methods. In addition, a small alternating voltage is more easily amplified and measured than a direct voltage of similar magnitude. An apparatus has been devised for the preparation of very pure metal films by evaporation. This apparatus eliminates such sources of contamination as hot filaments. The effect of annealing on both Hall coefficient and resistivity of evaporated films of antimony and bismuth has been examined and a qualitative explanation based on the electron theory of metals is presented. The Hall coefficient of unannealed antimony films is +0.216 c.g.s.m. and of annealed films is +0.244 c.g.s.m. with an accuracy of 1 percent. Previous observers using d.c. methods found values ranging from +0.12 to +0.22 c.g.s.m. The Hall coefficient of bismuth films depends on the film thickness. It is of the order of 1 c.g.s.m.

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