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Studies on plasma anodization in a DC glow discharge Olive, Graham

Abstract

The phenomenon of anodization in the plasma of a dc low pressure oxygen glow discharge is investigated, both from the viewpoint of the mechanisms involved and for potential applications. Aspects studied include the effect of discharge conditions on anodization rate, the significance of negative oxygen ions in the plasma, the ionic current field strength relation in the oxide, and the anodization of metal films on silicon for MIS devices. It was found that the process does not utilize gaseous negative ions from the neutral plasma, and that species transport through the oxide is by high field ionic conduction. The variation of anodization rate with discharge conditions was attributed principally to a dependence of the oxide field strength on the electron energy distribution and density in the plasma. Double oxide layer MIS structures were fabricated, and charge storage effects were investigated.

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