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UBC Theses and Dissertations

Planar GaAs Gunn and field effect devices Tucker, Trevor William

Abstract

Two types of devices, planar Gunn diodes and the negative resistance field effect transistors, have been investigated. Their fabrication, testing and properties are discussed. For the planar diode the Gunn domain velocity is predicted analytically and shown experimentally to decrease with, decreasing product of carrier concentration and diode thickness. A particular structure of GaAs FET which displays a static negative differential resistance (SNDR) characteristic without Gunn instability has been made. The mechanism of the SNDR is discussed and the device's uses in a number of circuits (oscillator, amplifier, phase-locked oscillator and bistable logic element) are described.

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