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A coupled-circuit representation of IGBT module geometry for high di/dt switching applications Rablah, Blake Kenton

Abstract

A coupled-circuit element representation of an IGBT module from Westcode Semiconductors Inc. has been developed, simulated, and experimentally confirmed at TRJUMF in Vancouver, BC. This model can be simulated in PSpice to predict the distribution of current within the IGBT module under high di/dt switching conditions. The goal of the simulations is to determine if the module is an acceptable candidate for implementation in a thyratron replacement switch for high-power pulse-power applications. The model developed has been shown to agree well with frequency domain measurements, and also with finite element method (FEM) simulations and boundary element method (BEM) simulations of the device.

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