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Inductance simulation for microelectronics and transistorized low-frequency active gyrators. Morin, Kenneth Raoul

Abstract

An inductance can be simulated for microelectronics applications using semiconductor elements (e.g., the "inductance diode"), using circuits containing amplifiers, or using gyrators. The last two methods are considered in this thesis. Several "amplifier methods" have appeared in the literature; these methods are classified into integrating- or differentiatiiig-type circuits, and a differentiating-type circuit is proposed which is believed to be new. Gyrator realization methods are tabulated and compared. An "active gyrator" ("AG") is proposed as a circuit element (it has unequal gyration resistances). The AG behaves much like a gyrator; it can be used to simulate inductance, and an analysis shows that it can be used to make isolators and circulators with a power gain. Methods of realizing an AG with amplifiers are investigated, and an analysis leads to seven 2-amplifier circuits. One of these AG circuits appears "best" for inductance simulation, and this one is investigated experimentally using a transistor circuit. An extensive bibliography of the inductance simulation and gyrator literature is presented.

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