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Ultrafast coherent studies of excitons and excitonic complexes in doped and undoped GaAs quantum wells Busch, Alexander Anthony
Abstract
This thesis reports a systematic study of near-band edge linear and nonlinear optical properties of doped and undoped semiconductor multiple quantum well samples, aimed at quantifying and separating the numerous contributions to the overall material response from photon excitation. Information obtained from both linear absorption and nonlinear, degenerate four-wave-mixing experiments is compared with elaborate numerical simulations. Accurate measures of 1S-2S binding energies and dephasing rates as a function of temperature from 5 to 40K is established. The biexciton binding energy and dephasing. rate over the temperature range 5 to 40 K is measured and, by comparison with theories reported in the literature, it is found that localization effects have a significant influence on the biexciton binding energy in 5 nm quantum wells. The first systematic attempt to quantitatively account for the continuum contribution to nonlinear response by fitting a series of spectra obtained at various input laser pulse detunings was conducted. Unique evidence for coherent beating between multi-exciton/free electron complexes in lightly doped material was also found.
Item Metadata
Title |
Ultrafast coherent studies of excitons and excitonic complexes in doped and undoped GaAs quantum wells
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Creator | |
Publisher |
University of British Columbia
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Date Issued |
2003
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Description |
This thesis reports a systematic study of near-band edge linear and nonlinear optical
properties of doped and undoped semiconductor multiple quantum well samples, aimed
at quantifying and separating the numerous contributions to the overall material response
from photon excitation. Information obtained from both linear absorption and nonlinear,
degenerate four-wave-mixing experiments is compared with elaborate numerical simulations.
Accurate measures of 1S-2S binding energies and dephasing rates as a function of
temperature from 5 to 40K is established. The biexciton binding energy and dephasing.
rate over the temperature range 5 to 40 K is measured and, by comparison with theories
reported in the literature, it is found that localization effects have a significant influence
on the biexciton binding energy in 5 nm quantum wells. The first systematic attempt to
quantitatively account for the continuum contribution to nonlinear response by fitting a
series of spectra obtained at various input laser pulse detunings was conducted. Unique
evidence for coherent beating between multi-exciton/free electron complexes in lightly
doped material was also found.
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Extent |
14504948 bytes
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Genre | |
Type | |
File Format |
application/pdf
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Language |
eng
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Date Available |
2009-11-13
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Provider |
Vancouver : University of British Columbia Library
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Rights |
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.
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DOI |
10.14288/1.0085713
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URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
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Graduation Date |
2003-05
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Campus | |
Scholarly Level |
Graduate
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Aggregated Source Repository |
DSpace
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Item Media
Item Citations and Data
Rights
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.