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Photoelectron experiments on semiconductor heterostructures using synchrotron radiation Colbow, Kevin Michael


Photoelectron spectroscopy using synchrotron radiation has been used to study a variety of semiconductor heterostructures. The electronic properties and composition of the interfaces between selected wide band gap materials and GaAs have been explored. Three types of wide band gap materials were considered namely chalcogen compounds, alkaline-earth fluorides, and rare-earth trifluorides. Prior to the growth of thin surface layers, the semiconductor substrates had to be atomically clean. The final step of the cleaning process normally involves desorbing the surface oxide layer. The effect of surface roughening was observed for the first time as a result of optically monitoring the oxide desorption in GaAs. High resolution photoemission spectroscopy of clean GaAs (100) surfaces treated with H2S revealed that these surfaces are completely terminated by a GaSx species which is stable in air or water. The H2S treated surfaces are better defined in terms of the interfacial chemical bonding than the recently proposed chemical treatments involving Na2S or (NH4)2S [More abstract follow]

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