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Impurity bands in semiconductors Tang, Tun-Hsu

Abstract

The onset of concentration broadening of the impurity energy band, in silicon doped with an acceptor and the increase of bandwidth with increasing impurity concentration found experimentally (White 1967) are in disagreement with Baltensperger’s theory (1953). There are two reasons to account for this discrepancy. What was compared previously was actually two different quantities: the experimental half-width of the impurity band and the theoretical full-width of the band. Besides,, the assumptions on which Baltensperger's theory is based, that the impurities are hydrogen-like and arranged on a regular array is not justified in the present problem. The comparison of experimental and theoretical half-widths does not make the discrepancy vanish. We suggest a new way to tackle this problem theoretically by combining the impurity wave functions found by Schechter (1962) and the Green’s function technique and the graphical method presented by Matsubara and Toyozawa (1962).

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