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Optical characterization of A1xGa1-xAs oxides Sfigakis, Francois

Abstract

The process of converting semiconducting Al₀.₉₈Ga₀.₀₂As layers grown by Molecular Beam Epitaxy (MBE) to a low refractive index oxide through exposure to water vapour at temperatures between 375-425°C has been studied. From contraction measurements and XRay diffraction (XRD) studies, it appears that the oxide cannot consist of a uniform layer of Al₂O₃-like material: it could either be a very porous form of Al₂O₃, an amorphous form of Al(OH)₃, or some combination. It is shown that good quality (crack-free, uniform on optical length scales) oxide layers can be formed from thick (0.5-2um) Al₀.₉₈Ga₀.₀₂As layers in ridge structures up to 70um wide. The refractive index of those layers was found to be 1.61±0.02.

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