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Temperature dependence of photoluminescence of the dilute nitride semiconductor GaNA̜s₁₋ Beaton, Daniel A.

Abstract

The design of a closed cycle optical cryostat for semiconductor crystal characterization is discussed. The system designed and developed is capable of performing photoluminescence, resistivity, and Hall measurements as a function of temperature from 10 K to higher than 300 K. Preliminary photoluminescence experiments are carried out as a test of the system. Results from the photoluminescence measurements show evidence for the existence of nitrogen clusters in GaNxAsi_x. The clusters are shown to produce states with energies inside the band gap. It has also been found that the introduction of bismuth, as a surfactant, during the growth process tends to reduce the density of the nitrogen clusters in the material.

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