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Fourier spectroscopy in the far infrared Strohmaier, Ronald Murray
Abstract
An infrared Fourier spectrophotometer has "been set up in the solid state laboratory of the University of British Columbia. A cryostat has been built and adapted to the spectrometer. A computer program to analyze the data and plot the spectrum has been written. As a demonstration of the system's capability, the transmission spectrum from 40 cmˉ¹ to 330 cmˉ¹ of boron doped silicon was obtained for the sample at liquid helium temperature. This spectrum was compared to earlier work done by Colbow in the region 240 cmˉ¹ to 330 cmˉ¹. A spectrum of boron and indium doped silicon was Investigated in the hope of finding Bˉ and In⁺ ionized centres. These were not found at the impurity concentrations and temperatures used. A transmission spectrum of intrinsic silicon at liquid helium temperature was obtained for the region 40 cmˉ¹ to 330 cmˉ¹ A comparison of the above spectra suggests that the low energy tail of the boron doped and boron and indium doped samples is due to a frequency dependent value of reflectivity as Is seen from the spectrum for intrinsic silicon.
Item Metadata
Title |
Fourier spectroscopy in the far infrared
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Creator | |
Publisher |
University of British Columbia
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Date Issued |
1970
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Description |
An infrared Fourier spectrophotometer has "been set up in the solid state laboratory of the University of British Columbia.
A cryostat has been built and adapted to the spectrometer.
A computer program to analyze the data and plot the spectrum has been written.
As a demonstration of the system's capability, the transmission spectrum from 40 cmˉ¹ to 330 cmˉ¹ of boron doped silicon was obtained for the sample at liquid helium temperature. This spectrum was compared to earlier work done by Colbow in the region 240 cmˉ¹ to 330 cmˉ¹.
A spectrum of boron and indium doped silicon was Investigated in the hope of finding Bˉ and In⁺ ionized centres. These were not found at the impurity concentrations and temperatures used.
A transmission spectrum of intrinsic silicon at liquid helium temperature was obtained for the region 40 cmˉ¹ to 330 cmˉ¹
A comparison of the above spectra suggests that the low energy tail of the boron doped and boron and indium doped samples is due to a frequency dependent value of reflectivity as Is seen from the spectrum for intrinsic silicon.
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Genre | |
Type | |
Language |
eng
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Date Available |
2011-06-02
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Provider |
Vancouver : University of British Columbia Library
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Rights |
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.
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DOI |
10.14288/1.0084768
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URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
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Campus | |
Scholarly Level |
Graduate
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Aggregated Source Repository |
DSpace
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Rights
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.