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Studies of the interactions of silicon with H, H2 and O using a novel RF probe technique Li, Hongjun
Abstract
A radio frequency technique was developed for measuring steady state, photo-induced, free carrier densities in indirect-bandgap semiconductors. This new in situ technique was then used to study the effects of H-atoms on the SiO₂/Si interfacial trap densities and to study the silicon surface and bulk chemistry during gate oxide growth with a remote O₂ plasma, annealing in H₂ , and the effect of the exposure of silicon substrates to atomic hydrogen. It is found that: (1) Gate oxides with interface trap levels that are as low as those present in thermally grown oxides can be grown at temperatures below 450 °C with atomic oxygen and subsequent annealing in the presence of H2. (2) Boron in p-type silicon can be passivated by hydrogen, which is present in the1 bulk when the crystal is annealed at temperatures between 360 and 450 °C, forming a B-H complex. Dissociation of the B-H complex at temperatures above 450 °C re-activates the boron as an acceptor. (3) Adsorption of O₂ and H₂ on freshly cleaned p-type silicon surfaces decreased the photo-generated carrier concentration which is interpreted in terms of an increase in the width of the depletion layer at the surface. (4) Exposure of a SiO₂/Si interface to H-atoms resulted in the formation of carrier traps other than Pb centers. At temperatures below 100 °C trap formation rates were found to show a first order dependence on the H-atom concentration with an activation energy of 0.15 ± 0.02 eV. 1 At higher temperatures, the reverse reaction and another process, which also reduces the traps formed by H-atoms, were observed. The kinetics and mechanisms of these processes are discussed in detail
Item Metadata
Title |
Studies of the interactions of silicon with H, H2 and O using a novel RF probe technique
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Creator | |
Publisher |
University of British Columbia
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Date Issued |
1997
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Description |
A radio frequency technique was developed for measuring steady state, photo-induced,
free carrier densities in indirect-bandgap semiconductors. This new in situ technique was then
used to study the effects of H-atoms on the SiO₂/Si interfacial trap densities and to study the
silicon surface and bulk chemistry during gate oxide growth with a remote O₂ plasma, annealing
in H₂ , and the effect of the exposure of silicon substrates to atomic hydrogen. It is found that:
(1) Gate oxides with interface trap levels that are as low as those present in thermally
grown oxides can be grown at temperatures below 450 °C with atomic oxygen and subsequent
annealing in the presence of H2.
(2) Boron in p-type silicon can be passivated by hydrogen, which is present in the1 bulk
when the crystal is annealed at temperatures between 360 and 450 °C, forming a B-H complex.
Dissociation of the B-H complex at temperatures above 450 °C re-activates the boron as an
acceptor.
(3) Adsorption of O₂ and H₂ on freshly cleaned p-type silicon surfaces decreased the
photo-generated carrier concentration which is interpreted in terms of an increase in the width of
the depletion layer at the surface.
(4) Exposure of a SiO₂/Si interface to H-atoms resulted in the formation of carrier traps
other than Pb centers. At temperatures below 100 °C trap formation rates were found to show a
first order dependence on the H-atom concentration with an activation energy of 0.15 ± 0.02 eV.
1
At higher temperatures, the reverse reaction and another process, which also reduces the traps
formed by H-atoms, were observed. The kinetics and mechanisms of these processes are
discussed in detail
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Extent |
5900816 bytes
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Genre | |
Type | |
File Format |
application/pdf
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Language |
eng
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Date Available |
2009-06-02
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Provider |
Vancouver : University of British Columbia Library
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Rights |
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.
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DOI |
10.14288/1.0061591
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URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
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Graduation Date |
1998-05
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Campus | |
Scholarly Level |
Graduate
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Aggregated Source Repository |
DSpace
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Item Media
Item Citations and Data
Rights
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.