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Reactions of the {100} face of gallium arsenide with molecular and atomic bromine Salusbury, Ian McKenzie
Abstract
The reaction of gallium arsenide {100} with molecular and atomic bromine was studied at temperatures between 100 and 225°C and at pressures of bromine between 0.1 and 40 Torr. Samples of GaAs were placed on a silicon platform within a Pyrex reactor flow system and the etch rate was determined by profilometry or weight change of the sample. Atomic bromine was produced by a 2450 MHz microwave discharge and the samples were etched downstream. The atomic concentration was measured by an isothermal calorimetric detector. Pressure dependence studies for molecular Br₂ etching showed that below 1-2 Torr of bromine, a first order reaction was rate-limiting whereas above this pressure a half order reaction was rate-limiting. Temperature dependence studies for the low pressure and high pressure regimes gave activation energies and pre-exponential values for the two respective rate controlling reactions. The first order reaction was found to have an activation energy of 29.2 ±4.0 kJ mol⁻¹ and a pre-exponential value of (3.4 ± 4.4) x 10²¹ molecule cm⁻² s⁻¹ Torr⁻¹. The activation energy for the half order reaction was found to be 8.4 ± 0.7 kJ mol⁻¹ with a pre-exponential of (6.4 ± 1.3) x 10¹⁸ molecule cm⁻² s⁻¹ Torr⁻¹⁄². The activation energy for atomic etching was calculated to be 12.9 ± 0.9 kJ mol⁻¹ and the pre-exponential, (7.1 ± 2.0) x 10²⁰ atom cm⁻² s⁻¹ Torr⁻¹.
Item Metadata
Title |
Reactions of the {100} face of gallium arsenide with molecular and atomic bromine
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Creator | |
Publisher |
University of British Columbia
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Date Issued |
1990
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Description |
The reaction of gallium arsenide {100} with molecular and atomic bromine was studied at temperatures between 100 and 225°C and at pressures of bromine between 0.1 and 40 Torr. Samples of GaAs were placed on a silicon platform within a Pyrex reactor flow system and the etch rate was determined by profilometry or weight change of the sample. Atomic bromine was produced by a 2450 MHz microwave discharge and the samples were etched downstream. The atomic concentration was measured by an isothermal calorimetric detector.
Pressure dependence studies for molecular Br₂ etching showed that below 1-2 Torr of bromine, a first order reaction was rate-limiting whereas above this pressure a half order reaction was rate-limiting. Temperature dependence studies for the low pressure and high pressure regimes gave activation energies and pre-exponential values for the two respective rate controlling reactions. The first order reaction was found to have an activation energy of 29.2 ±4.0 kJ mol⁻¹ and a pre-exponential value of (3.4 ± 4.4) x 10²¹ molecule cm⁻² s⁻¹ Torr⁻¹. The activation energy for the half order reaction was found to be 8.4 ± 0.7 kJ mol⁻¹ with a pre-exponential of (6.4 ± 1.3) x 10¹⁸ molecule cm⁻² s⁻¹ Torr⁻¹⁄².
The activation energy for atomic etching was calculated to be 12.9 ± 0.9 kJ mol⁻¹ and the pre-exponential, (7.1 ± 2.0) x 10²⁰ atom cm⁻² s⁻¹ Torr⁻¹.
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Genre | |
Type | |
Language |
eng
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Date Available |
2010-11-08
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Provider |
Vancouver : University of British Columbia Library
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Rights |
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.
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DOI |
10.14288/1.0059736
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URI | |
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Affiliation | |
Degree Grantor |
University of British Columbia
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Campus | |
Scholarly Level |
Graduate
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Aggregated Source Repository |
DSpace
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Rights
For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use.