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Attempts of molecular beam epitaxy growth of kagome FeGe thin films with RHEED analysis Li , Peize

Abstract

The hexagonal, or Kagome 1:1 FeGe phase, has yet to be successfully realized in large-scale thin-film form. In this study, we investigated various methods to stabilize the Kagome phase on c-plane (0001) sapphire substrates. Using the co-deposition method, even with treated substrates featuring terrace structures, the films became polycrystalline at lower growth temperatures (200-300 °C). As temperatures increased to 500-550 °C, an iron-rich β-FexGe (1.33

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Attribution-NonCommercial-NoDerivatives 4.0 International