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Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride Baghani, Erfan


Dislocation lines affect the electrical and optical properties of semiconductors. In this research, the effect that the threading dislocation lines have on the free electron concentration and the electron mobility within gallium nitride and indium nitride is investigated. A formulation is developed for obtaining the screening space charge concentration and the corresponding electrostatic potential profile surrounding the dislocation lines. The resultant electrostatic potential profile has then been used to compute the associated electron mobility, limited by scattering from the charged dislocation lines. As part of this research, a Gibbs factor formalism is also developed that can readily obtain the occupation statistics of the defect sites associated with the threading dislocation lines.

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