- Library Home /
- Search Collections /
- Open Collections /
- Browse Collections /
- UBC Theses and Dissertations /
- Growth and structure of yttrium sesquioxide epitaxial...
Open Collections
UBC Theses and Dissertations
UBC Theses and Dissertations
Growth and structure of yttrium sesquioxide epitaxial films Webster, Scott Elliott
Abstract
The use of molecular beam epitaxy as a method for producing solid state host crystals for planar waveguide lasers has been investigated. Single crystal yttrium sesquioxide with a very high degree of structural order has been grown on R-plane sapphire substrates. The (01Ῑ2) Al₂O₃ substrates were annealed in air at 1150°C to generate atomically smooth surfaces with parallel atomic steps. This process was important for maximizing structural quality and minimizing surface roughness of the grown Y₂O₃ film. A critical-thickness-like phenomenon was discovered, where the Y₂O₃ would grow in regions with near structural perfection at the beginning of growth. In thicker films, the x-ray diffraction peaks became wider, indicating less crystalline uniformity. The maximum equivalent “critical thickness” achieved was 7 nm for a film grown at 800°C with a growth rate of 20 nm/hr. The highly ordered material may be present in one uniform layer or distributed in smaller regions throughout the thin film. Y₂O₃ films on Al₂O₃ were annealed in air at temperatures up to 1400°C to study interdiffusion. By analyzing x-ray diffraction measurements, we found that Al migrated from the substrate into the Y₂O₃ film with an approximate activation energy for bulk diffusion of 3.0 eV. Diffusion on the Y₂O₃ surface was estimated to have an activation energy of (0.5 ± 0.3) eV from atomic force microscopy images. After annealing, the presence of Y₄Al₂O₉, YAlO₃, and Y₃Al₅O₁₂ phases was confirmed using x-ray diffraction and photoluminescence measurements. Attempts were made to use molecular hydrogen gas and gallium as surfactants during growth to improve film properties. No conclusive benefit was observed. Y₂O₃ film surface roughness was observed to increase roughly proportionally to the square root of film thickness. A 600 nm thick waveguide layer grown under optimal conditions had a root-mean-square roughness of 5.8 nm. This level of roughness could cause scattering loss at the waveguide core-cladding interface that is problematic for practical applications.
Item Metadata
Title |
Growth and structure of yttrium sesquioxide epitaxial films
|
Creator | |
Publisher |
University of British Columbia
|
Date Issued |
2012
|
Description |
The use of molecular beam epitaxy as a method for producing solid
state host crystals for planar waveguide lasers has been investigated.
Single crystal yttrium sesquioxide with a very high degree of structural
order has been grown on R-plane sapphire substrates.
The (01Ῑ2) Al₂O₃ substrates were annealed in air at 1150°C to
generate atomically smooth surfaces with parallel atomic steps. This
process was important for maximizing structural quality and minimizing surface roughness of the grown Y₂O₃ film. A critical-thickness-like
phenomenon was discovered, where the Y₂O₃ would grow in regions with near structural perfection at the beginning of growth. In
thicker films, the x-ray diffraction peaks became wider, indicating less
crystalline uniformity. The maximum equivalent “critical thickness”
achieved was 7 nm for a film grown at 800°C with a growth rate of
20 nm/hr. The highly ordered material may be present in one uniform
layer or distributed in smaller regions throughout the thin film.
Y₂O₃ films on Al₂O₃ were annealed in air at temperatures up to
1400°C to study interdiffusion. By analyzing x-ray diffraction measurements, we found that Al migrated from the substrate into the
Y₂O₃ film with an approximate activation energy for bulk diffusion
of 3.0 eV. Diffusion on the Y₂O₃ surface was estimated to have an
activation energy of (0.5 ± 0.3) eV from atomic force microscopy images. After annealing, the presence of Y₄Al₂O₉, YAlO₃, and Y₃Al₅O₁₂
phases was confirmed using x-ray diffraction and photoluminescence
measurements.
Attempts were made to use molecular hydrogen gas and gallium as
surfactants during growth to improve film properties. No conclusive
benefit was observed.
Y₂O₃ film surface roughness was observed to increase roughly proportionally to the square root of film thickness. A 600 nm thick waveguide layer grown under optimal conditions had a root-mean-square
roughness of 5.8 nm. This level of roughness could cause scattering
loss at the waveguide core-cladding interface that is problematic for
practical applications.
|
Genre | |
Type | |
Language |
eng
|
Date Available |
2012-03-15
|
Provider |
Vancouver : University of British Columbia Library
|
Rights |
Attribution-NonCommercial-NoDerivatives 4.0 International
|
DOI |
10.14288/1.0072633
|
URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
|
Graduation Date |
2012-05
|
Campus | |
Scholarly Level |
Graduate
|
Rights URI | |
Aggregated Source Repository |
DSpace
|
Item Media
Item Citations and Data
Rights
Attribution-NonCommercial-NoDerivatives 4.0 International