- Library Home /
- Search Collections /
- Open Collections /
- Browse Collections /
- UBC Faculty Research and Publications /
- Photoconductive terahertz generation in semiinsulating...
Open Collections
UBC Faculty Research and Publications
Photoconductive terahertz generation in semiinsulating GaAs and InP under the extremes of bias field and pump fluence Alfihed, Salman; Jenne, Matthias; Ciocoiu, Antonia; Foulds, Ian G.; Holzman, Jonathan
Abstract
This work analyses photoconductive (PC) terahertz (THz) emitters based upon the semi-insulating (SI) forms of GaAs and InP. Dependencies of the emitters are studied under the extremes of bias field and pump fluence to reveal the underlying physics of charge carrier photoexcitation, transport, and emission. The bias field dependence shows that SI-GaAs PC THz emitters are preferentially subject to space-charge-limited current, under the influence of trap states, while SI-InP PC THz emitters are preferentially subject to sustained current, due to a prolonged charge carrier lifetime and the ensuing Joule heating. This leads to differing frontrunners for performance with respect to a critical bias field. The pump fluence dependence shows space-charge and near-field screening for all PC THz emitters, with SI-GaAs predisposed to near-field screening (under the influence of transient mobility) and SI-InP predisposed to spacecharge screening. Such findings can support a deeper understanding on the underlying physics and optimal performance of SI-GaAs and SI-InP PC THz emitters.
Item Metadata
Title |
Photoconductive terahertz generation in semiinsulating GaAs and InP under the extremes of bias field and pump fluence
|
Creator | |
Publisher |
Optica Publishing Group
|
Date Issued |
2021
|
Description |
This work analyses photoconductive (PC) terahertz (THz)
emitters based upon the semi-insulating (SI) forms of
GaAs and InP. Dependencies of the emitters are studied
under the extremes of bias field and pump fluence to
reveal the underlying physics of charge carrier
photoexcitation, transport, and emission. The bias field
dependence shows that SI-GaAs PC THz emitters are
preferentially subject to space-charge-limited current,
under the influence of trap states, while SI-InP PC THz
emitters are preferentially subject to sustained current,
due to a prolonged charge carrier lifetime and the ensuing
Joule heating. This leads to differing frontrunners for
performance with respect to a critical bias field. The pump
fluence dependence shows space-charge and near-field
screening for all PC THz emitters, with SI-GaAs
predisposed to near-field screening (under the influence
of transient mobility) and SI-InP predisposed to spacecharge
screening. Such findings can support a deeper
understanding on the underlying physics and optimal
performance of SI-GaAs and SI-InP PC THz emitters.
|
Genre | |
Type | |
Language |
eng
|
Date Available |
2022-01-25
|
Provider |
Vancouver : University of British Columbia Library
|
Rights |
Attribution-NonCommercial-NoDerivatives 4.0 International
|
DOI |
10.14288/1.0413761
|
URI | |
Affiliation | |
Citation |
S. Alfihed, M. F. Jenne, A. Ciocoiu, I. G. Foulds, and J. F. Holzman, "Photoconductive terahertz generation in semi-insulating GaAs and InP under the extremes of bias field and pump fluence," Optics Letters, vol. 46, pp. 572-575, 2021.
|
Publisher DOI |
10.1364/OL.412699
|
Peer Review Status |
Reviewed
|
Scholarly Level |
Faculty; Researcher
|
Rights URI | |
Aggregated Source Repository |
DSpace
|
Item Media
Item Citations and Data
Rights
Attribution-NonCommercial-NoDerivatives 4.0 International