The optical response of silicon thin-films grown by ultra-high-vacuum evaporation
department or school: Applied Science, Faculty of
department or school: Engineering, School of (Okanagan)
data provider: DSpace
degree campus: UBCO
creator: Moghaddam, Saeed
issued: 2022-05-06T15:43:13Z
issued: 2022
related degree: Doctor of Philosophy - PhD
degree grantor: University of British Columbia
description: Conventional forms of silicon thin-film, prepared through the use of a plasma, offer a variety of attractive electronic properties but are prone to an instability. Hydrogen atoms are believed to be the source of the instability. Accordingly, experimental collaborators at the National Research Council of Canada employed ultra-high-vacuum evaporation to prepare thin-films of silicon on optical quality fused quartz substrates, which allow for a great deal of atomic species control during the growth process. The optical properties associated with these ultra-high-vacuum prepared forms of silicon thin-film are examined. In particular, through experimental measurements of the specular reflectance spectrum at near-normal incidence and the regular transmittance spectrum at normal incidence, the spectral dependence of the optical functions is resolved for eleven silicon thin- films, deposited at different growth temperatures. Generally, the refractive index increases in response to increases in the growth temperature. The optical absorption spectral dependence is also observed to exhibit a fundamental transition in its behavior with increases in the growth temperature. These observations are related to the changes that occur in the crystalline volume fraction accompanying increases in the growth temperature. A detailed quantitative uncertainty analysis is also performed. Drawing upon X-ray diffraction results, a placement of these silicon thin-films into the overall silicon thin-film continuum is then performed. Raman spectral results are then correlated with the refractive index's spectral dependence. The Raman spectrum of a given silicon thin-film allows for a probe of the order, correlating the Raman results with the optical function results providing one with the opportunity to probe how disorder influences the optical functions. All measures of order suggest that the order increases in response to increases in the growth temperature. Finally, the device implications of …
aggregated CHO: https://circle.library.ubc.ca/rest/handle/2429/81470
note: The optical response of siliconthin-films grown byultra-high-vacuum evaporationbySaeed MoghaddamB.Sc. Sharif University of Technology, 2014MASc. Simon Fraser University, 2016A THESIS SUBMITTED IN PARTIAL FULFILLMENT OFTHE REQUIREMENTS FOR THE DEGREE OFDOCTOR OF PHILOSOPHYinThe College of Graduate Studies(Electrical Engineering)THE UNIVERSITY OF BRITISH COLUMBIA(Okanagan)May 2022© Saeed Moghaddam, 2022The following individuals certify that they have read, and recommend to theCollege of Graduate Studies for acceptance, a dissertation entitled:The optical response of silicon thin-films grown byultra-high-vacuum evaporationsubmitted by Saeed Moghaddam in partial fulfilment of the requirementsof the degree of Doctor of Philosophy.Stephen Karrer O’Leary, School of EngineeringSupervisorJonathan Holzman, School of EngineeringSupervisory Committee MemberChen Feng, School of EngineeringSupervisory Committee MemberGuangrui Xia, Materials EngineeringUniversity ExaminerJayshri Sabarinathan, Western UniversityExternal ExamineriiAbstractConventional forms of silicon thin-film, prepared through the use of aplasma, offer a variety of attractive electronic properties but are prone to aninstability. Hydrogen atoms are believed to be the source of the instability.Accordingly, experimental collaborators at the National Research Councilof Canada employed ultra-high-vacuum evaporation to prepare thin-films ofsilicon on optical quality fused quartz substrates, which allow for a great dealof atomic species control during the growth process.The optical properties associated with these ultra-high-vacuum pre-pared forms of silicon thin-film are examined. In particular, through exper-imental measurements of the specular reflectance spectrum at near-normalincidence and the regular transmittance spectrum at normal incidence, thespectral dependence of the optical functions is resolved for eleven silicon thin-films, deposited at different growth temperatures. Generally, the refractiveiiiindex incre…
has type: Thesis/Dissertation
date issued: 2022-09
is shown at: 10.14288/1.0413302
language: eng
degree discipline: Electrical Engineering
provider: Vancouver : University of British Columbia Library
publisher: University of British Columbia
rights: Attribution-NonCommercial-NoDerivatives 4.0 International
rights URI: http://creativecommons.org/licenses/by-nc-nd/4.0/
scholar level: Graduate
contributor: O'Leary, Stephen Karrer
type: Text
identifier URI: http://hdl.handle.net/2429/81470