Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
department or school: Applied Science, Faculty of
department or school: Engineering, School of (Okanagan)
data provider: DSpace
degree campus: UBCO
creator: Siddiqua, Poppy
issued: 2019-04-01T17:46:34Z
issued: 2019
related degree: Doctor of Philosophy - PhD
degree grantor: University of British Columbia
description: Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocity-field characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart m…
aggregated CHO: https://circle.library.ubc.ca/rest/handle/2429/69392
note: ELECTRON TRANSPORT WITHIN THE WURTZITE AND ZINC-BLENDE PHASES OF GALLIUM NITRIDE AND INDIUM NITRIDE by Poppy Siddiqua M.Sc., North South University, 2011 A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY in THE COLLEGE OF GRADUATE STUDIES (Electrical Engineering) THE UNIVERSITY OF BRITISH COLUMBIA (Okanagan) March 2019 © Poppy Siddiqua, 2019 ii The following individuals certify that they have read, and recommend to the College of Graduate Studies for acceptance, a thesis/dissertation entitled: ELECTRON TRANSPORT WITHIN THE WURTZITE AND ZINC-BLENDE PHASES OF GALLIUM NITRIDE AND INDIUM NITRIDE submitted by Poppy Siddiqua in partial fulfillment of the requirements of the degree of Doctor of Philosophy Dr. Stephen K. O’Leary, School of Engineering Supervisor Dr. Jonathan Holzman, School of Engineering Supervisory Committee Member Dr. Murray Neuman, Irving K. Barber School of Arts and Sciences Supervisory Committee Member Dr. Jake Bobowski, Irving K. Barber School of Arts and Sciences University Examiner Dr. Jayshri Sabarinathan, Department of Electrical and Computer Engineering, The University of Western Ontario External Examiner iii Abstract Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap s…
has type: Thesis/Dissertation
date issued: 2019-05
is shown at: 10.14288/1.0377732
language: eng
degree discipline: Electrical Engineering
provider: Vancouver : University of British Columbia Library
publisher: University of British Columbia
rights: Attribution-NonCommercial-NoDerivatives 4.0 International
rights URI: http://creativecommons.org/licenses/by-nc-nd/4.0/
scholar level: Graduate
type: Text
identifier URI: http://hdl.handle.net/2429/69392