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Emergent optical and electronic properties in atomically thin rhombohedral-stacked transition metal dichalcogenides Yang, Dongyang
Abstract
Atomically thin Transition metal dichalcogenide (TMD) with different stacking orders can exhibit distinct quantum phenomena when interacting strongly with external fields. Rhombohedral (R)-stacked TMDs, where neighboring layers are oriented in the same direction, can be created via chemical synthesis or artificial stacking with a small twist. Understanding how atomic registry determines the properties of TMD homo-bilayer is crucial for revealing exotic physics in 2D semiconductors. This thesis uses advanced optical spectroscopy to explore excitonic and correlated phenomena in both homogeneous and twisted R-stacked TMD homo-bilayers. In R-stacked MoS₂ bilayers, we observe spontaneous electrical polarization induced by asymmetric interlayer coupling and Berry phase effects. Excitonic effects help reveal the electronic band structure, while a novel photovoltaic effect, driven by the depolarization field (DEP) in Gr/R-MoS₂/Gr heterostructures, shows potential for scalable optoelectronic applications. Using non-degenerate pump-probe photocurrent spectroscopy, we extract an intrinsic photocurrent speed of ∼2 ps, contributing to the understanding of ultrafast carrier dynamics. The out-of-plane electrical polarization in R-stacked MoS₂ can be switched under an external electric field through in-plane sliding motion, known as sliding ferroelectricity. We develop an optical method to probe domain wall motion in R-stacked MoS₂ homo-bilayers and trilayers, demonstrating that the pinning and de-pinning of domain walls drive the polarization switching. This leads to unconventional two-dimensional ferroelectric behavior, which could open new avenues for device engineering. Finally, we investigate the strongly correlated physics in R-stacked MoSe₂ bilayers with a small twist, revealing a series of correlated insulating states at both integer and fractional fillings in Γ-valley flat bands. Contrary to continuum-band calculation, we observe a Mott-insulator state instead of a semi-metal on a half-filled honeycomb lattice, offering insights into the semi-metal-to-insulator transition. This thesis provides the latest understanding of optical and electronic properties in rhombohedral-stacked TMDs, making them a promising platform for exploring both fundamental condensed matter physics and future applications.
Item Metadata
Title |
Emergent optical and electronic properties in atomically thin rhombohedral-stacked transition metal dichalcogenides
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Creator | |
Supervisor | |
Publisher |
University of British Columbia
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Date Issued |
2024
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Description |
Atomically thin Transition metal dichalcogenide (TMD) with different stacking orders can exhibit distinct quantum phenomena when interacting strongly with external fields. Rhombohedral (R)-stacked TMDs, where neighboring layers are oriented in the same direction, can be created via chemical synthesis or artificial stacking with a small twist. Understanding how atomic registry determines the properties of TMD homo-bilayer is crucial for revealing exotic physics in 2D semiconductors. This thesis uses advanced optical spectroscopy to explore excitonic and correlated phenomena in both homogeneous and twisted R-stacked TMD homo-bilayers.
In R-stacked MoS₂ bilayers, we observe spontaneous electrical polarization induced by asymmetric interlayer coupling and Berry phase effects. Excitonic effects help reveal the electronic band structure, while a novel photovoltaic effect, driven by the depolarization field (DEP) in Gr/R-MoS₂/Gr heterostructures, shows potential for scalable optoelectronic applications. Using non-degenerate pump-probe photocurrent spectroscopy, we extract an intrinsic photocurrent speed of ∼2 ps, contributing to the understanding of ultrafast carrier dynamics.
The out-of-plane electrical polarization in R-stacked MoS₂ can be switched under an external electric field through in-plane sliding motion, known as sliding ferroelectricity. We develop an optical method to probe domain wall motion in R-stacked MoS₂ homo-bilayers and trilayers, demonstrating that the pinning and de-pinning of domain walls drive the polarization switching. This leads to unconventional two-dimensional ferroelectric behavior, which could open new avenues for device engineering.
Finally, we investigate the strongly correlated physics in R-stacked MoSe₂ bilayers with a small twist, revealing a series of correlated insulating states at both integer and fractional fillings in Γ-valley flat bands. Contrary to continuum-band calculation, we observe a Mott-insulator state instead of a semi-metal on a half-filled honeycomb lattice, offering insights into the semi-metal-to-insulator transition. This thesis provides the latest understanding of optical and electronic properties in rhombohedral-stacked TMDs, making them a promising platform for exploring both fundamental condensed matter physics and future applications.
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Genre | |
Type | |
Language |
eng
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Date Available |
2024-10-01
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Provider |
Vancouver : University of British Columbia Library
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Rights |
Attribution-NonCommercial-NoDerivatives 4.0 International
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DOI |
10.14288/1.0445476
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URI | |
Degree | |
Program | |
Affiliation | |
Degree Grantor |
University of British Columbia
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Graduation Date |
2024-11
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Campus | |
Scholarly Level |
Graduate
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Rights URI | |
Aggregated Source Repository |
DSpace
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Rights
Attribution-NonCommercial-NoDerivatives 4.0 International