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Rendon, Mateo Jose

University of British Columbia

Reliability in electronics is becoming increasingly crucial as semiconductor markets diversify, economic and policy trends point to sustainability, and transistors scale into more aging-sensitive devices. This thesis studies the wear-out mechanisms at the center of device aging and failure in advanced technology nodes by creating a testing platform for characterization across several circuit design variables. We start with the physical explanations and device effects of bias temperature instability (BTI), hot-carrier injection (HCI), electromigration (EM), and time dependent dielectric breakdown (TDDB). Then, a survey on state-of-the-art wear-out mitigation techniques reveals that developing aging mechanisms sensors aids academia and industry alike by serving as tools for model characterization and monitors for dynamic on-silicon aging relief. Therefore, the core of this thesis presents four wear-out sensor designs by recollecting learnings from similar literature approaches, detailing their circuit topologies, and discussing the specifics of their implementation in a 12nmLP FinFET technology. The experimental methodology includes the tapeout of a test platform chip featuring over 150 sensor variants to verify the topologies. Additionally, we introduce a firmware-based dual PCB solution capable of automatically measuring the sensor outputs while replicating accelerated aging testing industry standards. After presenting initial measurements, we perform a 1000-hour 125°C stress test to estimate the test platform’s 10-year aging. The first 600-hour experimental results verify the developed sensors and provide insights on how transistor type, size, threshold voltage, and power supply impact BTI, HCI, EM, and soft and hard-breakdown TDDB in the 12nm FinFET technology.

Text

2024-09-11

Attribution-NonCommercial-NoDerivatives 4.0 International

http://hdl.handle.net/2429/89220

Electrical and Computer Engineering

University of British Columbia

UBCV

http://creativecommons.org/licenses/by-nc-nd/4.0/