Open Collections

Computational lithography for silicon photonics design

University of British Columbia

A lithography model is built using physical measurements obtained from a fabricated test pattern. The method is able to accurately predict the proximity and smoothing effects characteristic of a 193~nm deep-ultraviolet (DUV) lithography process. The accuracy of the model is verified by visually inspecting the fabricated test patterns and comparing them to the predictions of the lithography model. Furthermore, using a benchmark device (the contra-directional coupler), the prediction accuracy of the optical response is compared against experimental measurements. The comparisons showed the predictions had good agreement with the fabricated devices. Subsequently, an application of the lithography model is demonstrated. Design correction methods enabled by the lithography model are performed on the contra-directional coupler. The new designs were fabricated using electron-beam lithography and their experimental measurements confirmed an improved optical performance.

Text

2020-03-05

Attribution-NonCommercial-NoDerivatives 4.0 International

http://hdl.handle.net/2429/73688

Electrical and Computer Engineering

University of British Columbia

UBCV

http://creativecommons.org/licenses/by-nc-nd/4.0/