UBC Undergraduate Research

Ultrafast microfluidic droplet sorter extension work Kong, Luke; Wu, Samuel 2012-04-02

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Ultrafast Microfluidic Droplet Sorter Extension Work !1. 2. 3. !Table of Contents 1.0 Introduction! 1 2.0 Discussion! 4 2.1 Dielectrophoresis! 4 2.2 High-Voltage Switching! 4 2.3 Modeling! 5 2.3.1 The Construct! 5 2.3.2 Finite Element Analysis! 6 2.3.4 Computation! 7 2.3.5 Optimization! 8 2.4 Sorter Chip Design! 10 2.4.1 List of Modifications! 10 2.4.2 Design Description! 10 2.5 Sorter Chip Fabrication! 13 2.5.1 Fabrication! 13 2.5.2 Results! 13 2.6 Electrode Fabrication! 14 2.6.1 Procedure! 14 2.6.2 Results! 15 2.7 Electrode Characterization! 16 2.7.1 Procedure! 16 !2.7.2 Results! 17 2.8 Switch Characterization! 18 2.8.1 Procedure! 18 2.8.2 Results! 19 2.9 Droplet Actuation! 21 2.9.1 Procedure! 22 2.9.2 Results! 22 Conclusions! 24 3.0 Project Deliverables! 25 3.1 List of Deliverables! 25 3.2 Financial Summary! 25 4.0 Recommendations! 26 4.1 Electrode Fabrication! 26 4.2 Droplet Re-injection! 27 4.3 HV switching! 28 5.0 Appendices! 29 Appendix A: Fabrication Protocols! 29 A.1 Wafer Fabrication Procedure! 29 A.2 Wafer Fabrication Protocols! 30 A.3 PDMS Chip Fabrication! 32 !Appendix B: SOP for generating droplets for use with 30um channel width sorter chips.! 33 Appendix C: HV Switch design by the UBC PHAS E-LAB! 34 Appendix D: Electrode alloy quotes! 36 6.0 References! 38 !Table of Figures/Tables  ∇  E 2 !1.0 Introduction ! 1! 2! 32.0 Discussion 2.1 Dielectrophoresis  FDEP = 4πr 3∇  E 2 2.2 High-Voltage Switching ! 42.3 Modeling  FDEP = 4πr 3∇  E 2  ∇  E 2 2.3.1 The Construct ! 5Fig. 2. Basic construct of COMSOL electrode model 2.3.2 Finite Element Analysis ! 62.3.4 Computation ! 7 ∇  E 2 2.3.5 Optimization ! 8 ∇  E 2 d1 = 7µm  ∇  E 2 = 3.77 ×1011 ! 92.4 Sorter Chip Design 2.4.1 List of Modifications 1. 2. 3. 2.4.2 Design Description 10µm ! 10Design d1 (μm) d2 (μm) 1 10 72 2 10 142 3 20 72 4 10 110 ! 11! 122.5 Sorter Chip Fabrication 2.5.1 Fabrication 2.5.2 Results Wafer 1 Height (μm) Width (μm) Output Channel 130 180 Oil Channel 40 30 Electrode 40 30 Wafer 2 Height (μm) Width (μm) Output Channel 142 185 Oil Channel 50 30 Electrode 50 30 ! 132.6 Electrode Fabrication 2.6.1 Procedure ! 142.6.2 Results ! 152.7 Electrode Characterization 2.7.1 Procedure prob e 1 e ! 162.7.2 Results ! 172.8 Switch Characterization 2.8.1 Procedure HV Switch = + Fuse HV Supply 0V-5V TTL Signal prob e ! 182.8.2 Results ! 19! 202.9 Droplet Actuation ! 212.9.1 Procedure 2.9.2 Results ! 22! 232.0 Conclusions ! 243.0 Project Deliverables 3.1 List of Deliverables 3.2 Financial Summary ! 254.0 Recommendations 4.1 Electrode Fabrication ! 264.2 Droplet Re-injection ! 274.3 HV switching ! 285.0 Appendices Appendix A: Fabrication Protocols A.1 Wafer Fabrication Procedure 1. Clean the surface of the silicone wafer a. Pour IPA solution onto both sides of the silicone wafer b. Use nitrogen gas to dry the wafer 2. Pour photoresist onto the wafer 3. Set wafer on the spin-machine a. Turn on the vacuum and ensure the wafer is secured b. Set up the protocol 4. Start the spin-machine and wait 5. Bake the wafer in the oven 6. Ultraviolet exposure a. Attach the mask on a glass slide b. Place wafer in the frame c. Line up the wafer with the mask using the microscope 7. Expose the wafer in ultraviolet 8. Develop the wafer a. Pour the developer in a container b. Place the wafer in the liquid and rinse c. In a separate container, rinse the wafer again with the same developer 9. Bake the wafer in the oven 10. Examine the wafer under a microscope to make sure no unwanted dust particles are present 11. Measure the height of the oil channel ! 29A.2 Wafer Fabrication Protocols Name: Adam Q / Luke Date: 07-Feb-12 Photoresist: SU-8 3050 Lot# 11040263 Expiriry 5/1/2012 Previous layers: Should have done IPA coating before resist Spin speed and time 500rpm spread cycle for 10s, 3250 rpm for 30 seconds Pre-bake (time and temperature) 95 C 15 min Exposure time: 9s w/ filter Post-bake time: 1-5-1 65-95-65 Developer: SU8 Developer Development time: 2 min Solvent to wash off developer: IPA Hardbrake: Ramp to 120C, hold 10 mins, ramp down Thickness (using alpha-step) 37-40 (μm) Other notes: Some of the electrodes are touched the oil channel. May be the result of under- developing Name: Adam Q / Luke / Sam Date: 07-Feb-12 Photoresist: SU-8 100 (lot 11080530, exp 9/1/2012) Previous layers: Su8 3050 Spin speed and time 500 rpm for 30s, 1600 rpm for 50s Pre-bake (time and temperature) 65 for 20 min, 95 for 50 min, 65 for 5 min Exposure time: 26 sec with filter Post-bake time: n/a Developer: SU8 developer Development time: 8 min Solvent to wash off developer: Ipa Hardbrake: None Thickness (using alpha-step) n/a ! 30Other notes: Forgot to tape over alignment marks on pre- vious layer so alignment was very difficult Name: Adam Q / Luke / Sam Date: 09-Feb-12 Photoresist: SU-8 100 (lot 11080530, exp 9/1/2012) Previous layers: SU8 3050, SU8 100 (removed) Spin speed and time 500 rpm for 30s, 1600 rpm for 50s Pre-bake (time and temperature) 65 for 20 min, 95 for 50 min, 65 for 5 min Exposure time: 26 sec with filter Post-bake time: 65 for 2 min, 95 for 12 min, 65 for 2 min Developer: SU8 developer Development time: 8 min Solvent to wash off developer: IPA Hardbrake: None Thickness (using alpha-step) 130μm Other notes: ! 31A.3 PDMS Chip Fabrication 1. Use TCMS to remove moisture from silicone wafers under a fume hood 2. Make a foil dish for each wafer 3. Place each wafer in foil dish 4. Apply PDMS cleaning layer to remove any particles a. Mix PDMS using 10:1 ratio of RTV A:B with 20g A and 2g B per wafer b. Mix in centrifuge (1 minute mix plus 2 minute degas) c. Pour onto wafer 5. Bake at 80C for 25 minutes 6. Remove cleaning layer a. Cut along edge of water using a scalpel b. Peel off PDMS 7. Apply thicker PDMS layer a. Mix PDMS using 10:1 ratio of RTV A:B with 50g A and 5g B per wafer b. Mix in centrifuge (1 minute mix + 2 minute degas) c. Pour onto wafer 8. Place PDMS with wafers in a vacuum chamber for 1 hour a. Bubbles will form, so alternate at beginning between vacuum and atmospheric pressure to ensure PDMS will not bubble over sides of foil dish b. After bubbling subsides, wafers can be left in vacuum chamber for the re- mainder of the hour 9. Bake at 80C for 1 hour 10. Punch holes for channel inlets and outlets ! 32Appendix B: SOP for generating droplets for use with 20-67-16 (D1- D2-Height) droplet generator chip. ! 33Appendix C: HV Switch design by the UBC PHAS E-LAB ! 34! 35Appendix D: Electrode alloy quotes AIM Solder 12-04-02 7:37 AMGmail - Low melting-point solder quote. Page 1 of 1https://mail.google.com/mail/u/0/?ui=2&ik=288eee50d0&view=pt&q=solder&qs=true&search=query&msg=135ca9579228772c Samuel Wu <samuelwu90@gmail.com> Low melting-point solder quote. Gaby Melki <gmelki@aimsolder.com> Wed, Feb 29, 2012 at 11:28 AM To: Samuel Wu <samuelwu90@gmail.com> Cc: Claude Carreau <ccarreau@aimsolder.com> Hello,  Following is the quote for the solder wire you requested:  Alloy: 49Bi/21In/18Pb/12Sn Diam.: 0.030" Min qty: 10 feet Price: $45.90/ft Lead time : 10 working days or sooner FOB : Montreal Terms: COD  Regards,  Gaby Melki Customer Service Manager AIM Metals & Alloys L.P. Tel : 514- 494-5502 * 800-361-0783 Fax: 514- 494-6133  * 800-363-7754 gmelki@aimsolder.com www.aimsolder.com “Solder Plus Support” From: Samuel Wu [mailto:samuelwu90@gmail.com] Sent: Wednesday, February 29, 2012 12:56 PM To: Gaby Melki Subject: Low melting-point solder quote. [Quoted text hidden] ! 36Indium Page: QUOTATION Customer: ICA Territory: ICA Estimate: ICA Contact: Customer Currency: Net Amount ________________________________________________________________________________ ISO  9001 R E G I S T E R E D Customer RFQ #: Terms: Delivery Terms: Quote Date: Expiration Date: Unit PriceQuantityItem / Description UM Y002-007.RVF  10 FEB 2011     19027944 Samuel W. University of British Columbia ble Dept. of Physics Free car AMPEL, Room 245 Utica, NY 2355 East Mall Vancouver BRC V6T 1Z4 Canada Phone: 604-961-1530 E016093 Prepay (c/card 02/23/12 03/02/12 BritColm US$ US Dollar         Ind#19 Solder Wire              28.000        12.71000            355.88         .030" dia. wire                             GM         Min. order         28gm @ $12.71/gm         lead time: estimated 12-15 working days         after ARO         single release                                                  Sale Amount:             355.88                                                      USA Tax:               0.00                                                      GST/VAT:               0.00                                                         Misc:               0.00                                                 Total Amount:             355.88 Please contact us immediately to discuss any issues with this correspondence. Thank you for your business. ! 376.0 References ! 38

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