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Evaluation of stability and performance of an air-processed all-inorganic perovskite solar cell Shu, Ruochen

Abstract

In the past decade, perovskite solar cells have attracted many concerns with the features of easy fabrication methods, high energy conversion efficiency, and relatively lower fabrication cost. Remarkable progress was witnessed on the power conversion efficiency from 3.8% to 25.5%, but the degradation issue is still one of the main barriers to the commercialization of perovskite solar cells. Using the stable CsPbBr₃ as the photoactive material is regarded as a promising solution to improve device stability, however, degradation is also caused by other components in a device. The widely used Spiro-OMeTAD hole transporting material is expensive. It also needs the addition of p-dopants such as LiTFSI and 4-tBP to reach its peak performance. These additives exhibit poor stability against the harsh environment. An inexpensive p-type semiconductor CuSCN can be an ideal alternative, owing to its chemical stability and unique electronic properties. In this work, the potential of dopant-free CuSCN acting as a stable hole transporting material for CsPbBr3 solar cell was evaluated. High-quality CsPbBr3 film was prepared through an optimized two-step solution method and incorporated into all-inorganic perovskite solar cells with low-temperature solution-processed CuSCN film. The entire fabrication process was completed in an ambient environment. The best device delivered a power conversion efficiency of 5.55%, with superior air stability, ultraviolet stability, and a wide operating temperature from -20 °C to 160 °C. However, a faster degradation was witnessed during long-term thermal aging. This work demonstrates that improved stability and suitable photovoltaic performance can be achieved by using CuSCN as the hole transporting material of CsPbBr₃ perovskite solar cell, in comparison to other reported results in the literature.

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Attribution-NonCommercial-NoDerivatives 4.0 International